发明名称 Wiring structure and method of manufacturing the same
摘要 A wiring structure includes a first wiring, a first interlayer dielectric film having a first opening, a second wiring formed with a first recess portion on a region corresponding to the first opening, a second interlayer dielectric film having a second opening and a third wiring so formed as to cover the second interlayer dielectric film, wherein an inner side surface of the second opening is arranged on a region corresponding to the first recess portion and formed such that an opening width of a portion in the vicinity of an upper end increases from a lower portion toward an upper portion.
申请公布号 US7851917(B2) 申请公布日期 2010.12.14
申请号 US20080147122 申请日期 2008.06.26
申请人 SANYO ELECTRIC CO., LTD. 发明人 YAMASHITA TOMIO;MORIGAMI MITSUAKI
分类号 H01L23/52;H01L23/48;H01L29/40 主分类号 H01L23/52
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