发明名称 Process for atomic layer deposition
摘要 The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.
申请公布号 US7851380(B2) 申请公布日期 2010.12.14
申请号 US20070861491 申请日期 2007.09.26
申请人 EASTMAN KODAK COMPANY 发明人 NELSON SHELBY F.;LEVY DAVID H.;IRVING LYN M.;COWDERY-CORVAN PETER J.;FREEMAN DIANE C.;ELLINGER CAROLYN R.
分类号 H01L21/31 主分类号 H01L21/31
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