| 摘要 |
<p>PURPOSE: A power semiconductor device is provided to improve a tradeoff property by including a gate electrode buried in a trench. CONSTITUTION: A first layer(8) of a first conductive type is formed on a first electrode. A second layer(14) of a second conductive type is formed on the first layer. A third layer including a first region(2) of the first conductive type and a second region of the second conductive type is formed on the second layer. A second electrode(11) is contacted with the first and second regions. The inner wall of the trench is coated with a gate insulation layer(9).</p> |
