发明名称 |
MANUFACTURING METHOD OF SI FILM USING SI SOLUTION PROCESS |
摘要 |
PURPOSE: A silicon film manufacturing method is provided to improve the utilization of a silicon film by controlling the thickness range of the silicon film according to a purpose. CONSTITUTION: A solution for the formation of silicon is manufactured. A UV is irradiated to the solution. The solution for the formation of silicon is spread onto a substrate. A solvent within the solution for the formation of silicon is removed. An electron beam is irradiated. |
申请公布号 |
KR20100130009(A) |
申请公布日期 |
2010.12.10 |
申请号 |
KR20090048652 |
申请日期 |
2009.06.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JUNG HYUN;MA, DONG JOON |
分类号 |
H01L21/208 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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