发明名称 MANUFACTURING METHOD OF SI FILM USING SI SOLUTION PROCESS
摘要 PURPOSE: A silicon film manufacturing method is provided to improve the utilization of a silicon film by controlling the thickness range of the silicon film according to a purpose. CONSTITUTION: A solution for the formation of silicon is manufactured. A UV is irradiated to the solution. The solution for the formation of silicon is spread onto a substrate. A solvent within the solution for the formation of silicon is removed. An electron beam is irradiated.
申请公布号 KR20100130009(A) 申请公布日期 2010.12.10
申请号 KR20090048652 申请日期 2009.06.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JUNG HYUN;MA, DONG JOON
分类号 H01L21/208 主分类号 H01L21/208
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