| 摘要 |
FIELD: chemistry. ^ SUBSTANCE: method involves chemical treatment and chalcogenisation of the surface of a GaAs plate in an aqueous, alcohol or some other chalcogen-containing solution or ammonium sulphide gas (NH4)2S, washing and drying, and vacuum drying the surface of the GaAs plate. After vacuum drying, the chalcogenised surface of the GaAs plate is treated with UV radiation with wavelength =172-400 nm and radiation power density W>0.01 W cm-2 for time t=1-600 seconds in a vacuum at residual atmospheric pressure less than 10-5 torr. Treatment with UV radiation is carried out at residual atmospheric pressure less than 5410-6 torr. A thin metal film or a dielectric film is deposited in the surface of the GaAs plate after treatment with UV radiation. ^ EFFECT: invention enables activation of desorption of physically adsorbed sulphur, low density of surface states of GaAs, improved electrical parametres of metal-semiconductor contacts and dielectric-semiconductor boundary surface, formed on the chalcogenised GaAs surface. ^ 6 cl, 2 ex, 2 dwg |
