发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR IMAGE SENSOR
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem that microlens surfaces are broken or contaminated since dicing and chip handling are carried out in a state wherein the microlens surfaces are exposed in a conventional method of manufacturing a semiconductor image sensor wherein chips are made individual by peeling a protective tape after a substrate made thin by polishing a reverse surface of the substrate after the protective tape is stuck on a substrate top surface is stuck on a tape for dicing. <P>SOLUTION: In the method of manufacturing the semiconductor image sensor having microlenses 15, the semiconductor image sensor is manufactured through the processes of: forming a three-layer structure comprising a first peeling layer, a resin layer and a second peeling layer on a surface side of each of the microlenses 15; laminating a protective plate on a top surface of the three-layer structure and then polishing the reverse surface of the semiconductor substrate 12; peeling and removing the protective film, resin layer and first peeling layer and then laminating a cover glass 16; and forming a means of connecting the semiconductor image sensor to an external electric circuit. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010278105(A) 申请公布日期 2010.12.09
申请号 JP20090127389 申请日期 2009.05.27
申请人 ZYCUBE:KK 发明人 MOTOYOSHI MAKOTO
分类号 H01L27/14;H04N5/335;H04N5/369;H04N5/372;H04N5/374 主分类号 H01L27/14
代理机构 代理人
主权项
地址