METHOD FOR FORMING SILICON CARBIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a silicon carbide film capable of obtaining the silicon carbide film having a dense, uniform and desired film thickness, and reducing cost and achieving a large diameter. SOLUTION: The method for forming the silicon carbide film 13 includes: a step for forming a silicon film 14 containing at least either amorphous silicon or polysilicon on a substrate 11, and a step for applying carbonizing treatment to the silicon film 14 to form the silicon carbide film 13 containing the carbonized film. COPYRIGHT: (C)2011,JPO&INPIT