| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which improves the quality of the semiconductor device and improves an yield by preventing a fault caused by the swelling of a film. SOLUTION: A second inter-layer insulating film is formed in the upper part of a silicon substrate (step S100). First heat treatment is performed (step S110), and then, the substrate is cleaned (step S120). When a lower electrode adhesion film and a first conductive film are formed, the surface of the first conductive film is treated so as to remove impurities (step S170). Then, a first dielectric film is formed without exposing the first conductive film to the atmosphere (step S180). Besides, the surface of the first dielectric film is treated so as to remove impurities (step S200). Then, a second dielectric film is formed without exposing the first dielectric film to the atmosphere (step S210). COPYRIGHT: (C)2011,JPO&INPIT |
