| 摘要 |
A semiconductor device and an inductor are provided. The semiconductor device includes a top level interconnect metal layer (Mtop) pattern. A below-to-top level interconnect metal layer (Mtop−1) pattern is disposed directly below the top level interconnect metal layer pattern. A first via plug pattern is vertically disposed between the top level interconnect metal layer pattern and the below-to-top level interconnect metal layer pattern, electrically connected to the top level interconnect metal layer pattern and the below-to-top level interconnect metal layer pattern. The top level interconnect metal layer pattern, the below-to-top level interconnect metal layer pattern and the first via plug pattern have profiles parallel with each other from a top view.
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