| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial substrate for group-III nitride semiconductors, a group-III nitride semiconductor element, and a stand-alone substrate for group-III nitride semiconductors, which produce good crystallinity not only for materials having growth temperatures at or below 1050°C, such as AlGaN, GaN, and GaInN, but also for high-Al Al<SB>x</SB>Ga<SB>1-x</SB>N compositions having high growth temperatures, and also to provide a substrate for growing group-III nitride semiconductors, for fabricating the same, and a method for efficient fabrication thereof. <P>SOLUTION: These are characterized by being provided with a crystal growth substrate, at least the surface region of which includes an aluminum-containing group-III nitride semiconductor, and a scandium nitride film formed on top of the surface region. <P>COPYRIGHT: (C)2011,JPO&INPIT |
