| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which attains an improvement in extraction efficiency of light. <P>SOLUTION: The light emitting element 20 is constituted so that a reflective metal film 10 is formed on a second principal surface side of a group III-V group compound semiconductor layer 21 having a light emitting layer 5, the semiconductor layer 21 and a support substrate 11 are joined via the reflective metal film, a surface electrode 13 is formed on a first principal surface of the semiconductor layer, and an ohmic contact junction portion 9 is arranged on part of a surface of the reflective metal film on the side of the semiconductor layer in a region not right below the surface electrode. The surface electrode has a surface-side contact portion 3b and a transparent dielectric reflection portion 3a, and is arranged so that the light emitting element has one side of ≤320 μm, the surface electrode is polygonal or round and has an outer periphery of 235 to 700 μm in length, and the contact junction portion 9 is arranged on the side of an outer periphery of the light emitting element or nearby the outer periphery such that the contact junction portion surrounds the surface electrode when viewed from the side of the surface electrode side, and a distance L from each position of the outer edge of the surface electrode to the nearest contact junction portion is equal. <P>COPYRIGHT: (C)2011,JPO&INPIT |
