| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode capable of providing a bilaterally-symmetrical distribution, and to provide a method of manufacturing the same. <P>SOLUTION: A second semiconductor layer 12 formed of a compound semiconductor having a zinc-blende crystal structure and forming a light emitting diode structure is grown on a first substrate formed of a compound semiconductor having a zinc-blende crystal structure and having a principal surface inclined in the [110] direction with respect to the (001) plane; the semiconductor layer 12 side of the first substrate is stuck to a second substrate 14; the first substrate is removed to expose the semiconductor layer 12; a mask 15 for etching having a rectangular flat shape having a long side extending in the [110] direction or [-1-10] direction and a short side extending in the [-110] direction or [1-10] direction is formed on the exposed semiconductor layer 12; and the semiconductor layer 12 is patterned by wet etching by using the mask 15 for etching. <P>COPYRIGHT: (C)2011,JPO&INPIT |
