| 摘要 |
PROBLEM TO BE SOLVED: To construct a bipolar thin film transistor having high performance and high reliability, which is capable of performing n-type and p-type bipolar operations. SOLUTION: The bipolar thin film transistor is a thin film transistor, which includes: three electrodes of a source electrode, a drain electrode and a gate electrode; and respective elements of a channel layer and a gate insulating film. The channel layer is a laminate of an organic film and a metal-oxide film which contains indium, which is doped with at least one of tungsten, tin and titanium, and the electro-resistivity of which is controlled beforehand. COPYRIGHT: (C)2011,JPO&INPIT
|
