| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor device which, for an arbitrary operating frequency, allows selective arrangement of resistances having the optimum resistance value between gate terminal electrodes and suppresses loop oscillation. SOLUTION: The high-frequency semiconductor device includes: gate finger electrodes 24, source finger electrodes 20, and drain finger electrodes 22 each of which is arranged on a first surface of a substrate 10 and has a plurality of fingers; FET cells 40 each having a gate terminal electrode formed by bundling together the fingers of the gate finger electrode 24, a source terminal electrode formed by bundling together the fingers of the source finger electrode 20, and a drain terminal electrode formed by bundling together the fingers of the drain finger electrode 22; and resistors 30 each arranged between gate terminal electrodes. A plurality of distances between gate terminal electrodes of adjacent FET cells 40 can be selected depending on the determined position of the resistance 30. The gate terminal electrode has an electrode pattern that allows selection of a plurality of values for the resistor 30 without changing the pattern size thereof. COPYRIGHT: (C)2011,JPO&INPIT
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