| 摘要 |
Quantum cascade lasers (QCLs), and methods of manufacture of QCLs, comprising an active portion. In some embodiments, the active portion can comprise: a plurality of tensiley strained quantum barrier layers, each comprising Ga y In1- y As; and a plurality of compressively strained quantum well layers, each comprising Ga x In1- x As. In some embodiments, the active portion can comprise: a plurality of compressively strained quantum barrier layers, each comprising Al y In1- y As; and a plurality of tensiley strained quantum well layers, each comprising Ga x In1- x As. The active portion can be grown on InP substrate. |
