发明名称 |
PROCESSING METHOD AND STORAGE MEDIUM |
摘要 |
PURPOSE: A processing method and a memory medium are provided to sufficiently secure gas for recovering a low dielectric layer. CONSTITUTION: A processing device(1) includes a chamber(11) which receives a wafer(W). A loader(12) for horizontally supporting the wafer is installed inside the chamber. The loader is supported by a cylindrical supporting member which is extended from the bottom center to the upper side of the chamber. A resistance heating type heater(15) is buried in the loader.
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申请公布号 |
KR20100129684(A) |
申请公布日期 |
2010.12.09 |
申请号 |
KR20100047505 |
申请日期 |
2010.05.20 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SHIMIZU WATARU;KUBOTA KAZUHIRO;HAYASHI DAISUKE |
分类号 |
H01L21/3065;H01L21/02;H01L21/768 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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