发明名称 PROCESSING METHOD AND STORAGE MEDIUM
摘要 PURPOSE: A processing method and a memory medium are provided to sufficiently secure gas for recovering a low dielectric layer. CONSTITUTION: A processing device(1) includes a chamber(11) which receives a wafer(W). A loader(12) for horizontally supporting the wafer is installed inside the chamber. The loader is supported by a cylindrical supporting member which is extended from the bottom center to the upper side of the chamber. A resistance heating type heater(15) is buried in the loader.
申请公布号 KR20100129684(A) 申请公布日期 2010.12.09
申请号 KR20100047505 申请日期 2010.05.20
申请人 TOKYO ELECTRON LIMITED 发明人 SHIMIZU WATARU;KUBOTA KAZUHIRO;HAYASHI DAISUKE
分类号 H01L21/3065;H01L21/02;H01L21/768 主分类号 H01L21/3065
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