| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress warpage of a semiconductor wafer or semiconductor chip. <P>SOLUTION: A method of manufacturing a semiconductor device includes processes of forming, a pad 11 on a principal surface 10a of the semiconductor chip 10, an insulating layer 16 formed covering the principal surface 10a so that the pad 11 is exposed, an insulating film 2 formed on the insulating layer 16 so that the pad 11 is exposed, a plurality of re-wiring lines 17 electrically connected to a plurality of pads 11 respectively on the insulating film 2, an insulating film 3 formed on the rewiring lines 17 so that the rewiring lines 17 are partially exposed, and a plurality of bumps 18 joined with regions of the plurality of rewiring lines 17 exposed from the insulating film 3, wherein one of the insulating film 2 and insulating film 3 is formed so that a part of an insulating film or insulating layer formed on the side of a reverse surface 10b with respect to the insulating film 2 or insulating film 3 is exposed. <P>COPYRIGHT: (C)2011,JPO&INPIT |
