| 摘要 |
PROBLEM TO BE SOLVED: To effectively prevent dielectric breakdown by static surge, in a semiconductor device. SOLUTION: This semiconductor device includes: an NMOS 16 connected between an input line for transmitting an input signal from the outside and an internal node N1, and having a gate electrode connected to a power line 14; an NMOS 17 connected between a grounding line 15 and the internal node, and having a gate electrode connected to the grounding line 15; an NMOS 22 connected between the gate electrode of the NMOS 16 and the internal node N1, and having a gate electrode connected to the grounding line 15; and an NMOS 24 subjected to diode connection between the power line 14 and the grounding line 15. The distance of an N-type impurity diffusion layer from the gate electrode of the NMOS 22 to a connection region of wiring of the source electrode thereof is larger than that of the N-type impurity diffusion layer from the gate electrode of the NMOS 24 to a connection region of wiring of the source electrode thereof. COPYRIGHT: (C)2011,JPO&INPIT
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