| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide thin film transistor that prevents an element from deteriorating or decreasing in uniformity, and to provide a method of fabricating the same. SOLUTION: The method for fabricating the oxide thin film transistor include the steps of: forming a gate electrode 121 on a substrate 110; forming a gate insulating layer 115 on the substrate 110; forming a primary active layer 124a having a tapered portion to a side face of a channel region on the gate insulating layer 115, and forming source and drain electrodes on the primary active layer 124a; and forming a secondary active layer 124b made of amorphous zinc oxide-based semiconductor on the source and drain electrodes 122, 123 and being in contact with the tapered portion of the primary active layer 124a, wherein the primary active layer 124a is etched at a low selectivity during a wet etching of the source and drain electrodes 122, 123, to have the tapered portion on the side face. COPYRIGHT: (C)2011,JPO&INPIT
|
