| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon carbide film capable of obtaining a patterned carbide silicon film without etching the silicon carbide film having difficulty in etching. SOLUTION: The method for forming the silicon carbide film 13 includes: a step for forming a silicon film 14 containing at least either amorphous silicon or polysilicon on a substrate 11, a patterning step for patterning the silicon film 14, and a step for applying carbonizing treatment to the silicon film 14 to form the silicon carbide film 13 after the patterning step. COPYRIGHT: (C)2011,JPO&INPIT
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