发明名称 PERFORMING DOUBLE EXPOSURE PHOTOLITHOGRAPHY USING A SINGLE RETICLE
摘要 A reticle includes a first pattern formed in a first die flash region of the reticle and a second pattern different than the first pattern formed in a second die flash region of the reticle. A method for patterning a wafer having a plurality of die regions defined thereon includes exposing a first die region using a first pattern formed on a reticle during a first exposure, repositioning the reticle, and exposing the first die region using a second pattern formed on the reticle during a second exposure.
申请公布号 US2010310972(A1) 申请公布日期 2010.12.09
申请号 US20090477474 申请日期 2009.06.03
申请人 CAIN JASON P 发明人 CAIN JASON P.
分类号 G03F1/00;G03B27/54;G03F7/20 主分类号 G03F1/00
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