SOLID-STATE IMAGING DEVICE

摘要

In a solid-state imaging device (50), a plurality of picture elements comprised of a photoelectric conversion area (11) which is provided on the upper portion of the semiconductor substrate (10) and generates an electric charge by photoelectric conversion; a transfer electrode (4) provided on the side of the photoelectric conversion area (11) and on the semiconductor substrate (10); and a light shielding film (6) which covers the transfer electrode (4) and has an opening above the photoelectric conversion area (11), are arranged. In at least one picture element, a reflection preventing film (16a) which is formed within the opening without overlapping the light shielding film (6) is provided on the photoelectric conversion area (11).