| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique for improving reliability of a semiconductor device by suppressing disturbance occurring in a nonvolatile memory. <P>SOLUTION: On a semiconductor substrate 1S, a memory gate electrode MG is formed via a laminate insulating film comprising a first potential barrier film EB1, a charge storage film EC, and a second potential barrier film EB2. On side walls on both sides of the memory gate electrode MG, auxiliary gate electrodes AG1, AG2 are formed via silicon oxide films OX3. A shallow n-type low-concentration impurity diffusion region EX1 is formed in the semiconductor substrate 1S right below the auxiliary gate electrodes AG1, AG2. In wring operation to a memory cell which is thus constituted, a negative voltage is applied to auxiliary gate electrodes AG1, AG2 of an non-selected cell. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
