| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory that can be operated at high speed. <P>SOLUTION: A semiconductor memory device includes: a memory cell array 100 configured of at least a first and second portions (100-1, 100-2) each including a plurality of memory cells each with a variable resistor which stores an electrically rewritable resistance value as a data; and a control circuit 107 which controls a first operation including selected one of operations to erase, write and read the data in the first portion and a second operation including selected one of operations to erase, write and read the data in the second portion, the first operation and the second operation being performed in temporally overlapped relation with each other. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
