| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which a comparator is used to compare, with a predetermined reference, an electrical change obtained in a state similar to a state in which a memory element has a resistance value of a second state, without changing the resistance value of the memory element from a first state to the second state. SOLUTION: The semiconductor memory device 1 includes the memory element (F) whose resistance value is irreversibly changed from the first state to the second state, a resistive element (R) which has the resistance value corresponding to the second state, a switch (TR2, TR3, TR4) which switches the memory element and the resistive element, and the comparator (72) which compares, with the predetermined reference inputted to a second input (C2), the electrical change appearing at a first input (C1), depending on a current flowing when the memory element or the resistive element switched by the switch is biased. COPYRIGHT: (C)2011,JPO&INPIT
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