发明名称 |
METHOD CONTROLLING DEEP POWER DOWN MODE IN MULTI-PORT SEMICONDUCTOR MEMORY |
摘要 |
Disclosed is a method of controlling a deep power down mode in a multi-port semiconductor memory having a plurality of ports connected to a plurality of processors. Control of the deep power down mode in the multi-port semiconductor memory is performed such that activation/deactivation of the deep power down mode are determined in accordance with signals applied through various ports in the plurality of ports.
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申请公布号 |
US2010309742(A1) |
申请公布日期 |
2010.12.09 |
申请号 |
US20100768060 |
申请日期 |
2010.04.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HO-CHEOL;LEE JUNG-BAE |
分类号 |
G11C5/14;G11C8/16 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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