| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce electrons (dark voltage) occurring in a channel part of a transfer transistor during exposure time, and to more reduce an image quality deterioration by noise from a charge pump circuit when driving a gate signal for transfer with negative voltage. <P>SOLUTION: In a solid-state imaging element, in order to output negative voltage as a control potential to each gate electrode of transfer transistors 2a and 2b during charge storing period to a node 4 of a photoelectric conversion part, and in order to respectively change each gate potential of the transfer transistors 2a and 2b connected to a plurality of photodiodes 1 and 1b sharing the node 4 during a reading period from the negative voltage to 0 V of a ground level, and during change from the negative voltage to 0 V of the ground level, each gate electrode of the transfer transistors 2a and 2b is disconnected from an output end of a charge pump circuit for outputting the negative voltage and connected to an output end of 0 V of the ground level. <P>COPYRIGHT: (C)2011,JPO&INPIT |
