| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress a write error to a memory cell by boosting a channel to a higher voltage. <P>SOLUTION: The nonvolatile semiconductor memory 10 includes: a memory cell group which is connected in series and electrically rewritable; a memory string including a selection transistor ST1 which is connected between one end of the memory cell group and a bit line BL, and a selection transistor ST2 which is connected between the other end of the memory cell group and a source line SL; a plurality of word lines WL connected to each gate of the memory cell group; a dummy transistor DT arranged between memory cells at both ends among the memory cell group while having the channel length longer than that of the memory cell; and a dummy word line DWL connected to a gate of the dummy transistor DT. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
