| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor substrate, along with an intermediate structure for forming a thin film transistor substrate, capable of preventing bad effect on polycrystallization by a natural oxide film formed on an amorphous silicon film when changing the amorphous silicon film into polycrystal silicon film by laser radiation. SOLUTION: The manufacturing method at least includes an amorphous silicon film formation step for forming an amorphous silicon film 21a on a substrate 10, an oxidizing protective film formation step for forming an oxidizing protective film 30 on the amorphous silicon film 21a, and a polycrystal silicon film formation step in which laser 22 is irradiated from above the oxidizing protective film 30 to change the amorphous silicon film 21a into a polycrystal silicon film 21p. In this method, the amorphous silicon film formation step and the oxidizing protective film formation step are continuously performed in a chamber which is used for the amorphous silicon film formation step. COPYRIGHT: (C)2011,JPO&INPIT
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