METHOD FOR FORMING SILICON CARBIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a silicon carbide film capable of making a silicon carbide device and a silicon device coexist on a single chip without etching a silicon carbide film having difficulty in etching. SOLUTION: This method for forming the silicon carbide film 13 includes: a step for forming a mask 15a at a position covering a part of a silicon film 14 on a substrate 11 having the silicon film 14 on a surface layer, and a step for applying carbonizing treatment to the silicon film 14 of a region where the mask 15a is not formed to form the silicon carbide film 13 containing the carbonized film. COPYRIGHT: (C)2011,JPO&INPIT