| 摘要 |
A nonvolatile memory element includes a first electrode (103) formed on a substrate (101), a resistance variable layer (108) and a second electrode (107), wherein the resistance variable layer has a multi-layer structure including at least three layers which are a first transition metal oxide layer (104), a second transition metal oxide layer (106) which is higher in oxygen concentration than the first transition metal oxide layer (104), and a transition metal oxynitride layer (105). The second transition metal oxide layer (106) is in contact with either one of the first electrode (103) and the second electrode (107). The transition metal oxynitride layer (105) is provided between the first transition metal oxide layer (104) and the second transition metal oxide layer (106).
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