发明名称 AMORPHOUS GROUP III-V SEMICONDUCTOR MATERIAL AND PREPARATION THEREOF
摘要 A reactive evaporation method for forming a group III-V amorphous material attached to a substrate includes subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface.
申请公布号 US2010311229(A1) 申请公布日期 2010.12.09
申请号 US20080744028 申请日期 2008.11.19
申请人 MOSAIC CRYSTALS LTD. 发明人 EINAV MOSHE
分类号 H01L21/205 主分类号 H01L21/205
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