| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor imaging device which can make uniform characteristics of a semiconductor element between a pixel region and the other region. SOLUTION: A plurality of photoelectrically converting devices are disposed in a pixel region 2. Circuit regions 3, 4, and 5 are disposed at the circumference of the pixel region 2. All of copper wiring 20a, 20b, 20c, and 23c are disposed in the pixel region 2 and the circuit regions 3, 4, and 5. Cap layers 21 and 24 are disposed on all the copper wiring 20a, 20b, 20c, and 23c, and the cap layers other than those on the copper wiring in the pixel region and the circuit region are removed. COPYRIGHT: (C)2011,JPO&INPIT |
