| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having less leakage current, and to provide a method for manufacturing the same. SOLUTION: In the semiconductor light emitting element, a lower cladding layer 32, an active layer 33, an upper cladding layer 34, and a contact layer 35 are formed on an opening 20A of an insulating layer 20 on a surface of a substrate 10 in this order. A width W2 of an upper surface 32A of the lower cladding layer 32 is formed to be larger than a width W1 of the opening 20A of the insulating layer 20, and a width W3 of an upper surface 34A of the upper cladding layer 34 is formed to be larger than the width W2 of the upper surface 32A of the lower cladding layer 32. The upper cladding layer 34 covers the lower cladding layer 32 and the active layer 33 also from the side faces of the cladding and active layers. COPYRIGHT: (C)2011,JPO&INPIT
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