| 摘要 |
PROBLEM TO BE SOLVED: To prevent an initial threshold voltage of a memory cell arranged nearby a bit line contact part from rising by suppressing an influence of ultraviolet rays generated during contact hole formation with respect to an MONOS type memory. SOLUTION: A semiconductor memory device includes a bit line diffusion layer 11, a bit line insulating film 12, an ONO insulating film 4, a second gate electrode 6, a contact diffusion layer 13, an interlayer insulating film 9, a contact electrode 8, an ultraviolet-ray blocking film 22, and an ultraviolet-ray blocking film 21. The ultraviolet-ray blocking film 22 covers a side face of the second gate electrode 6, closest to the contact electrode 8, on the side close to the contact electrode 8, and at least a part on the ultraviolet-ray blocking film 22 and the ultraviolet-ray blocking film 21 overlap each other in plan view. COPYRIGHT: (C)2011,JPO&INPIT
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