| 摘要 |
PROBLEM TO BE SOLVED: To provide a ridge type semiconductor laser device that can be made low in cost and high in output and suppress power supply deterioration. SOLUTION: The ridge type semiconductor laser device includes a first conductivity type clad layer (3), an active layer (4) formed on the fist conductivity clad layer (3), second conductivity type clad layers (5, 6 and 7) formed on the active layer (4) and having a flat portion and a projection portion forming a ridge portion projecting from the flat portion, and a current block layer (9) formed on a side face of the projection portion and the flat portion, the current block layer (i) being made of silicon nitride and having a refractive index of≤1.86. COPYRIGHT: (C)2011,JPO&INPIT
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