| 摘要 |
A switching resistance RAM that is highly integrated as well as reduced in a read-out time is realized. There is formed an NPN type bipolar transistor BT composed of a collector layer made of an N-well 11, a base layer made of a P+ type Si layer 12A formed in a surface of the N-well 11, and an emitter layer made of an N+ type Si layer 15 formed in a surface of the P+ type Si layer 12A. Also, there are formed a word line WL0 electrically connected to the N+ type Si layer 15 and bit lines BL1-BL4 intersecting with the word line WL0. Also, there are formed a plurality of switching layers 14 formed on a surface of the P+ type Si layer 12A, each being electrically connected to corresponding each of the bit lines and switching between an ON state and an OFF state and an electric potential fixing line 19A to fix the P+ type Si layer 12A at a predetermined electric potential.
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