METHOD FOR MANUFACTURING SOI WAFER, AND SOI WAFER

摘要

PROBLEM TO BE SOLVED: To provide an SOI wafer having a high interface level density (Dit) for trapping carriers at an interface between a BOX layer (buried oxide film) and a base wafer without complicating manufacturing process itself of the SOI wafer, and to provide a method for manufacturing the SOI wafer. SOLUTION: A method for manufacturing an SOI wafer includes at least the steps of: forming a silicon oxide film on a surface of a base wafer made of a silicon single crystal; bonding the base wafer with a bond wafer made of a silicon single crystal via the silicon oxide film; and thinning the bond wafer to form an SOI layer. In the method, a wafer having a resistivity of 100Ω-cm or more and a surface roughness (Ra) at the surface to which the bond wafer is to be bonded of 0.1μm or more is used as the base wafer. COPYRIGHT: (C)2011,JPO&INPIT