发明名称 |
GROUP III METAL NITRIDE CRYSTAL AND METHOD FOR PRODUCTION THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for production of a large-area group III metal nitride crystal having the optionally specified main plane other than (0001) plane and having high crystallinity. SOLUTION: The method for production of the group III metal nitride crystal includes the steps of: preparing a plurality of seeds having an off angle; arranging the seeds so that the main planes of the seeds are directed to roughly one direction; and growing the group III metal nitride crystal on the main plane of the seed. In the arranging step, the seeds are arranged so that the off angles of the plurality of seeds are in roughly the same direction. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2010275171(A) |
申请公布日期 |
2010.12.09 |
申请号 |
JP20090132264 |
申请日期 |
2009.06.01 |
申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
KUBO SHUICHI;SHIMOYAMA KENJI;FUJITO TAKESHI;KIYOMI KAZUMASA;MIKAWA YUTAKA |
分类号 |
C30B29/38;C23C16/34;C30B25/20;H01L21/205 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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