| 摘要 |
PROBLEM TO BE SOLVED: To provide electrical characteristics demanded of semiconductor elements requiring different electric characteristics using two kinds of crystalline semiconductor films, by forming two kinds of crystalline semiconductor films, having different average crystal particle sizes and superior carrier mobility on the same substrate. SOLUTION: The manufacturing method includes an amorphous film formation step for forming an amorphous semiconductor film 24 on a substrate 11; a first crystallizing step for forming a first crystalline semiconductor film 24A, by melting/solidifying a part of the amorphous semiconductor film 24 for crystallizing; a second crystallizing step for forming a second crystalline semiconductor film 24B; whose average crystal particle size is larger than that of the first crystalline semiconductor film 24A by solid phase growth of a remaining amorphous semiconductor film 24; and a recrystallization step, in which the first and second c crystalline semiconductor films 24B are melted and solidified for recrystallization, while such state having average crystal particle size of the first crystalline semiconductor film 24A being smaller than that of the second crystalline semiconductor film 24B is maintained. COPYRIGHT: (C)2011,JPO&INPIT
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