| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having an element and a penetrating electrode formed on a semiconductor substrate, the method preventing contamination of the element due to copper from the through electrode. SOLUTION: The method of manufacturing the semiconductor device, comprises the steps of: preparing a structure including a semiconductor substrate 10, the element ZD formed therein, a through-hole TH formed to penetrate the semiconductor substrate 10, and an insulating layer 12 formed on both surface sides of the semiconductor substrate 10 and an inner surface of the through-hole TH, and covering the element ZD; forming the penetrating electrode 20 in the through-hole TH; forming a first barrier metal layer 30a covering the penetrating electrode 20; forming a contact hole CH1 reaching a connection portion of the element ZD; removing a natural oxide film on the connection portion of the element ZD in the contact hole CH1; and forming a first wiring layer 40 connected to the penetrating electrode 20 and a second wiring layer 40a connected to the connection portion of the element ZD through the contact hole CH1 using the first barrier metal layer 30a. COPYRIGHT: (C)2011,JPO&INPIT
|
