METHOD FOR MANUFACTURING HIGH ELECTRON MOBILITY TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial growth method to achieve formation of a hetero interface with stable characteristics and resultantly formation of an InP etch stopper layer with high selectivity. SOLUTION: The epitaxial growth method forms a semiconductor thin film with a heterojunction of group III-V compound semiconductors by a molecular beam epitaxial growth method. The method includes: a first manufacturing step of radiating at least one of group III element molecular beam and a first group V element molecular beam to form a first compound semiconductor layer; a second manufacturing step of stopping the radiation of the group III element molecular beam and the first group V element molecular beam to suspend growth until an amount of the first group V element supply is reduced to≤1/10 an amount of the supply in the first manufacturing step; and a third manufacturing step of radiating an at least one of group III element molecular beam and a second group V element molecular beam to form a second compound semiconductor layer different from the first compound semiconductor, on the first compound semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT