| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device that can surely prevent a capacity insulation film, made of ferroelectric or high dielectric in a capacitor from being deteriorated by hydrogen generating from a hydrogen barrier film, and to provide a manufacturing method for the device. SOLUTION: The semiconductor memory device includes a capacitor 20, that is formed on a semiconductor substrate 11 and is provided with a capacity insulation film 18 made of ferroelectric or high dielectric, and a first hydrogen barrier film 15 formed under the capacitor 20. The first hydrogen barrier film 15 is made of silicon nitride containing fluorine. COPYRIGHT: (C)2011,JPO&INPIT
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