| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory for effectively screening a failure caused by variation in threshold of a cell transistor. SOLUTION: The ferroelectric memory includes: a memory cell array 111 having a plurality of memory cells in which ferroelectric capacitors and the cell transistors are connected in parallel, the memory cells being connected each other in series for each block; a plurality of word lines WL1-WL8; a plurality of bit lines BL1-BL4; a word line driver 201 which selects an operation voltage for memory cell, a ground voltage, or a third voltage having the voltage value different from the operation voltage and the ground voltage, to applies the selected voltage to the word lines; and a measurement circuit 202 connected to the bit lines to measure threshold voltages, output currents, or output voltages of the cell transistors and to output signals for showing measured results of the threshold voltages, output currents, or the output voltages. COPYRIGHT: (C)2011,JPO&INPIT
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