发明名称 Monolithic Low Impedance Dual Gate Current Sense MOSFET
摘要 A power switch includes a first power transistor having a first source electrode, a first gate electrode, and a first drain electrode, and a second power transistor having a second source electrode, a second gate electrode, and a second drain electrode. The power switch further includes a first pilot transistor has a third source electrode, a third gate electrode, and a third drain electrode. The first, second and third drain electrodes are electrically connected together. The first and second source electrodes are electrically connected together. The first and third gate electrodes are electrically connected together and can be biased independently from the second gate electrode. The first power transistor is the same size as or smaller than the second power transistor and the first power transistor is larger than the first pilot transistor. The first power transistor, the second power transistor, and the first pilot transistor are monolithically integrated in an integrated circuit.
申请公布号 US2010308872(A1) 申请公布日期 2010.12.09
申请号 US20090479613 申请日期 2009.06.05
申请人 GILLBERG JAMES E 发明人 GILLBERG JAMES E.
分类号 H03B1/00 主分类号 H03B1/00
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