| 摘要 |
A solar cell comprises an amorphous silicon solar cell unit in which a p-type layer, an i-type layer, and an n-type layer are laminated. The p-type layer includes a high-concentration amorphous silicon carbide layer doped with a p-type dopant and an amorphous silicon buffer layer which is substantially undoped with the p-type dopant. Then, a band gap of the amorphous silicon buffer layer is defined to be 1.65 eV or greater.
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