| 摘要 |
<p>PURPOSE: A method for forming a pattern for a negative spacer pattering process is provided to prevent a lifting phenomenon or the collapse of the pattern by increasing the thickness of poly-silicon deposited between the patterns. CONSTITUTION: First poly-silicon is deposited on the upper side of an etching layer. The first poly-silicon is evaporated at the upper part of the etched layer. The first poly-silicon is patterned by using a mask. A spacer material(402) is deposited on the upper side of the first poly-silicon and the etching layer. The gap-fill poly-silicon is deposited and etched on the spacer materials.</p> |
