| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for heat treatment, capable of raising the temperature of the surface of a substrate to a higher temperature, while suppressing cracks in the substrate. SOLUTION: First, weak irradiation is performed at an approximately constant luminous output L1, and buffer irradiation which gradually increases the luminous output from L1 to L2 is successively performed. Further, strong irradiation is performed to a semiconductor wafer at an output waveform which peaks at a luminous output L3 that is larger than the luminous output L2. Strong irradiation is performed to the semiconductor wafer that is preheated to a certain extent by weak irradiation at the waveform having a peak, thereby the temperature of the surface of the semiconductor wafer can be raised to a higher temperature. Moreover, the width of temperature elevation in momentarily raising the temperature of the surface of the semiconductor wafer by strong irradiation can be reduced by performing the buffer irradiation, and the damage caused to the semiconductor wafer is suppressed to prevent the cracks in the wafer. COPYRIGHT: (C)2011,JPO&INPIT |
