| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing thin films of metal oxides, metal nitrides and metals having excellent characteristics on a semiconductor substrate or a substrate of a flat display element by a time-divisional process gas supply in a CVD (Chemical Vapor Deposition) method using plasma synchronized with the process gas supply cycle. SOLUTION: The method for depositing thin films of metal oxides on a substrate in a reaction vessel of an atomic layer vapor deposition apparatus using plasma includes a step of supplying raw metal compounds into the reaction vessel, a step of supplying gaseous oxygen into the reaction vessel, and a step of generating oxygen plasma in the reaction vessel during the predetermined time. COPYRIGHT: (C)2011,JPO&INPIT |
