SUBSTRATE PROCESSING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To suppress a film thickness loss of an oxide film, which contains at least one of a rare earth oxide and an alkaline-earth oxide, when performing rinsing on a semiconductor substrate. SOLUTION: The oxide film, which contains at least one of a rare earth oxide and an alkaline-earth oxide, is formed on the semiconductor substrate (W). When performing rinsing on the semiconductor substrate (W), a rinse liquid made of an alkaline chemical or an organic solvent is used. COPYRIGHT: (C)2011,JPO&INPIT